Single-crystalline ZnO sheet Source-Gated Transistors - Groupe de Recherche en Electronique, Matériaux, Acoustique et Nanotechnologies Access content directly
Journal Articles Scientific Reports Year : 2016

Single-crystalline ZnO sheet Source-Gated Transistors


Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDSSAT) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.


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hal-02077037 , version 1 (22-03-2019)



Abhishek Singh Dahiya, Charles Opoku, R A Sporea, Balasubramaniam Sarvankumar, G. Poulin-Vittrant, et al.. Single-crystalline ZnO sheet Source-Gated Transistors. Scientific Reports, 2016, 6, pp.19232. ⟨10.1038/srep19232⟩. ⟨hal-02077037⟩
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