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Article Dans Une Revue Nanoscale Research Letters Année : 2012

Plasma-deposited fluoropolymer film mask for local porous silicon formation

Résumé

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates.

Dates et versions

hal-01810905 , version 1 (08-06-2018)

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Citer

Thomas Defforge, Marie Capelle, François Tran-Van, Gaël Gautier. Plasma-deposited fluoropolymer film mask for local porous silicon formation. Nanoscale Research Letters, 2012, 7 (1), pp.344. ⟨10.1186/1556-276X-7-344⟩. ⟨hal-01810905⟩
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