Copper-selective electrochemical filling of macropore arrays for through-silicon via applications - Physico-chimie des Matériaux et des Electrolytes pour l'Energie Laboratoire - - EA 6299 Accéder directement au contenu
Article Dans Une Revue Nanoscale Research Letters Année : 2012

Copper-selective electrochemical filling of macropore arrays for through-silicon via applications

Résumé

In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, ‘almost’ through-silicon macropores were locally opened by a backside photolithographic process followed by anisotropic etching. The 450 × 450-μm² opened areas were then selectively filled with copper by a potentiostatic electrochemical deposition. Using this process, high density conductive via (4.5 × 105 cm−²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined.

Dates et versions

hal-01810906 , version 1 (08-06-2018)

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Thomas Defforge, Jérôme Billoue, Marianne Diatta, François Tran-Van, Gaël Gautier. Copper-selective electrochemical filling of macropore arrays for through-silicon via applications. Nanoscale Research Letters, 2012, 7 (1), pp.375. ⟨10.1186/1556-276X-7-375⟩. ⟨hal-01810906⟩
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