Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq
,
Yassine Fouzi
,
Ali Abboud
,
N. Defrance
,
Francois Vaurette
,
et al.
Article dans une revue
hal-04084512v1
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
Marie Lesecq
,
Eric Frayssinet
,
Marc Portail
,
Micka Bah
,
N. Defrance
,
et al.
Article dans une revue
hal-03741438v1
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Band structure and polar distortion tuning at (La,Sr)MnO3 / (Ba,Sr)TiO3 interface
J. Wolfman
,
A. Ruyter
,
B. Negulescu
,
Pascal Andreazza
,
X. Wallart
,
et al.
IEEE ISAF 2022 , Jun 2022, Tours (FR), France
Communication dans un congrès
hal-04485893v1
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Resonant MEMS for Gas Detection Based on the Measurements of Physical Properties of Gas Mixtures
Isabelle Dufour
,
Luis Iglesias Hernandez
,
Priyadarshini Shanmugam
,
Jean-François Michaud
,
Daniel Alquier
,
et al.
2020 Joint Conference of the IEEE International Frequency Control Symposium and the IEEE International Symposium on Applications of Ferroelectrics , Jul 2020, Keystone (virtual conference), United States. pp.1-3,
⟨10.1109/IFCS-ISAF41089.2020.9234908⟩
Communication dans un congrès
hal-02481928v1
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Switchable DBR Filters Using Semiconductor Distributed Doped Areas (ScDDAs)
Rozenn Allanic
,
Denis Le Berre
,
Cédric Quendo
,
David Chouteau
,
Virginie Grimal
,
et al.
Article dans une revue
hal-03174224v1
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
Marie Lesecq
,
E. Frayssinet
,
Marc Portail
,
M Bah
,
N. Defrance
,
et al.
13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020) , Oct 2021, Tours, France
Communication dans un congrès
hal-04038119v1
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Toward a highly efficient large surface Perovskite Silicon 4-Terminal tandem module
Nathanaelle Schneider
,
Emilie Raoult
,
Thomas Guillemot
,
Sophie Bernard
,
Marion Provost
,
et al.
Article dans une revue
hal-03446057v1
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
Micka Bah
,
Damien Valente
,
Marie Lesecq
,
N. Defrance
,
Maxime Garcia Barros
,
et al.
Article dans une revue
hal-02929022v1
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On-Chip Polarization Reconfigurable Microstrip Patch Antennas Using Semiconductor Distributed Doped Areas (ScDDAs)
Rozenn Allanic
,
Denis Le Berre
,
Cédric Quendo
,
Douglas Silva de Vasconcellos
,
Virginie Grimal
,
et al.
Article dans une revue
hal-03762865v1
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H2MEMS Project: Resonant MEMS for detection of hydrogen release in radioactive waste disposal facility
Isabelle Dufour
,
Luis Iglesias Hernandez
,
Priyadarshini Shanmugam
,
Jean-François Michaud
,
Laurent Colin
,
et al.
Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF / IFCS 2022) , Apr 2022, Paris, France
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hal-03778623v1
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Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors
Micka Bah
,
Daniel Alquier
,
Marie Lesecq
,
Nicolas Defrance
,
Damien Valente
,
et al.
Article dans une revue
hal-04378667v1
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq
,
Y. Fouzi
,
A. Abboud
,
N. Defrance
,
Francois Vaurette
,
et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022) , Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-04039596v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Micka Bah
,
Damien Valente
,
Marie Lesecq
,
N. Defrance
,
Maxime Garcia Barros
,
et al.
Wocsdice Exmatec 2021 , Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
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hal-03284079v1
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On-Chip Bandstop to Bandpass Reconfigurable Filters Using Semiconductor Distributed Doped Areas (ScDDAs)
Rozenn Allanic
,
Fabien Le Borgne
,
Hassan Bouazzaoui
,
Denis Le Berre
,
Cédric Quendo
,
et al.
Article dans une revue
hal-04140870v1
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