Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC - Université de Tours Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2018
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hal-01740927 , version 1 (22-03-2018)

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Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩
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