Journal Articles
IEEE Transactions on Electron Devices
Year : 2018
Gael Gautier : Connect in order to contact the contributor
https://univ-tours.hal.science/hal-01740927
Submitted on : Thursday, March 22, 2018-3:10:15 PM
Last modification on : Friday, March 24, 2023-2:53:06 PM
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Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩
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