In-depth porosity control of mesoporous silicon layers by an anodization current adjustment - Université de Tours Access content directly
Journal Articles Journal of Applied Physics Year : 2017
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hal-01741078 , version 1 (22-03-2018)

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Julie Lascaud, Thomas Defforge, Dominique Certon, Damien Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩
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