%0 Journal Article %T Pulsed laser-deposited VO 2 thin films on Pt layers %+ GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347) %A Sakai, Joe %A Zaghrioui, Mustapha %A Ta Phuoc, Vinh %A Roger, Sylvain %A Autret, Cecile %A Okimura, Kunio %< avec comité de lecture %@ 0021-8979 %J Journal of Applied Physics %I American Institute of Physics %V 113 %N 12 %P 123503 %8 2013-03-28 %D 2013 %R 10.1063/1.4795813 %K Raman spectroscopy %K Thin films %K Reflectivity %K Phase transitions %K X-ray diffraction %K Ozone %K Magnetization reversals %K Crystal structure %K Pulsed laser deposition %K Electrodes %Z Physics [physics] %Z Chemical SciencesJournal articles %X VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance. %G English %L hal-01794471 %U https://univ-tours.hal.science/hal-01794471 %~ UNIV-TOURS %~ CNRS %~ GREMAN %~ INSA-GROUPE %~ INSA-CVL %~ TEST3-HALCNRS