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https://univ-tours.hal.science/hal-01862351
Submitted on : Monday, August 27, 2018-12:07:00 PM
Last modification on : Friday, March 24, 2023-2:53:08 PM
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- HAL Id : hal-01862351 , version 1
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Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. ⟨hal-01862351⟩
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