Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band - Université de Tours Access content directly
Journal Articles Nanotechnology Year : 2020

Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band

Sumin Choi
  • Function : Author
Valery Davydov
  • Function : Author
Ludmila Kulikova
  • Function : Author
Taras Plakhotnik
  • Function : Author
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hal-03192261 , version 1 (07-04-2021)

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Sumin Choi, Viatcheslav Agafonov, Valery Davydov, Ludmila Kulikova, Taras Plakhotnik. Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band. Nanotechnology, 2020, 31 (20), pp.205709. ⟨10.1088/1361-6528/ab72bb⟩. ⟨hal-03192261⟩
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