@proceedings{portail:hal-03981941, TITLE = {{Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues}}, AUTHOR = {Portail, Marc and Chenot, S{\'e}bastien and Ghorbanzadeh-Bariran, Mahdis and Khazaka, Rami and Nguyen, Luan and Alquier, Daniel and Michaud, Jean Fran{\c c}ois}, URL = {https://univ-tours.hal.science/hal-03981941}, PUBLISHER = {{Trans Tech Publications Inc.}}, VOLUME = {1062}, PAGES = {94-98}, YEAR = {2022}, MONTH = May, DOI = {10.4028/p-00832x}, KEYWORDS = {CMUT transducer epitaxial layer Si(110) 3C-SiC(111) Si selective growth thermal annealing ; CMUT transducer ; epitaxial layer ; Si(110) ; 3C-SiC(111) ; Si selective growth ; thermal annealing}, PDF = {https://univ-tours.hal.science/hal-03981941/file/MSF.1062.94.pdf%3B%20filename%2A%3DUTF-8%27%27MSF.1062.94.pdf}, HAL_ID = {hal-03981941}, HAL_VERSION = {v1}, }