%0 Unpublished work %T Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues %+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) %+ GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347) %A Portail, Marc %A Chenot, Sébastien %A Ghorbanzadeh-Bariran, Mahdis %A Khazaka, Rami %A Nguyen, Luan %A Alquier, Daniel %A Michaud, Jean François %@ 978-3-0357-2760-9 %@ 0255-5476 %J Materials Science Forum %I Trans Tech Publications Inc. %V 1062 %P 94-98 %8 2022-05-31 %D 2022 %R 10.4028/p-00832x %K CMUT transducer epitaxial layer Si(110) 3C-SiC(111) Si selective growth thermal annealing %K CMUT transducer %K epitaxial layer %K Si(110) %K 3C-SiC(111) %K Si selective growth %K thermal annealing %Z Engineering Sciences [physics]Proceedings %X We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of selectively grown Si on a masked SiC(100) and the further regrowth of 3C-SiC on a Si (110) layer. The final release of the SiC membrane, to define a CMUT, is also addressed using a simple thermal treatment allowing to suppress several technological steps. %G English %2 https://univ-tours.hal.science/hal-03981941/document %2 https://univ-tours.hal.science/hal-03981941/file/MSF.1062.94.pdf%3B%20filename%2A%3DUTF-8%27%27MSF.1062.94.pdf %L hal-03981941 %U https://univ-tours.hal.science/hal-03981941 %~ UNICE %~ UNIV-TOURS %~ CNRS %~ UNIV-COTEDAZUR %~ GREMAN %~ INSA-GROUPE %~ INSA-CVL %~ CRHEA %~ TEST3-HALCNRS