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Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
Rami Khazaka
,
Marius Grundmann
,
Marc Portail
,
Philippe Vennegues
,
Marcin Zielinski
et al.
Journal articles
hal-01741073v1
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Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
Marc Portail
,
Sébastien Chenot
,
Mahdis Ghorbanzadeh-Bariran
,
Rami Khazaka
,
Luan Nguyen
et al.
Proceedings
hal-03981941v1
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Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
Rami Khazaka
,
Jean-François Michaud
,
Philippe Vennegues
,
Daniel Alquier
,
Marc Portail
et al.
Journal articles
hal-01741061v1
|
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Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate
Rami Khazaka
,
Emilie Bahette
,
Marc Portail
,
Daniel Alquier
,
Jean-François Michaud
et al.
Journal articles
hal-01784769v1
|
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Direct Insight into Grains Formation in Si Layers Grown on 3C-SiC by Chemical Vapor Deposition
Rami Khazaka
,
Marc Portail
,
Philippe Vennéguès
,
Daniel Alquier
,
Jean-François Michaud
et al.
Journal articles
hal-01784770v1
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On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction
Rami Khazaka
,
Jean-François Michaud
,
Philippe Vennegues
,
Luan Nguyen
,
Daniel Alquier
et al.
Journal articles
hal-01740987v1
|
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Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration
Jean-François Michaud
,
Rami Khazaka
,
M. Portail
,
G. Andrä
,
J. Bergmann
et al.
Conference papers
hal-01741555v1
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