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Communication Dans Un Congrès Année : 2022

Titanium nitride / porous silicon electrode for microsupercapacitor applications

Résumé

This abstract deals with the investigation of a tunable way to prepare integrated micro-supercapacitors made of coated porous silicon (pSi). pSi allows developing a large specific surface area of the electrode material. To overcome the insulating behavior of the pSi, we chose to use Atomic Layer Deposition (ALD) to deposit a 2 nm thin layer of Titanium Nitride (TiN), to cover the pore sidewalls. SEM characterizations have been realized to confirm the conformal deposition of the conductive layer inside the porosity and electrochemical characterizations were carried out to determine the performances of supercapacitors. Capacity around 500 µF/cm² were obtained in Na2SO4 1M aqueous media.

Domaines

Matériaux
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Dates et versions

hal-03980611 , version 1 (09-02-2023)

Identifiants

  • HAL Id : hal-03980611 , version 1

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Romain Dailleau, Thomas Defforge, François Tran Van, Gaël Gautier. Titanium nitride / porous silicon electrode for microsupercapacitor applications. Porous semiconductors science and technology, Mar 2022, Lido di Camaiore, Italy. ⟨hal-03980611⟩
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