A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate - Université de Tours Access content directly
Journal Articles physica status solidi (a) Year : 2017
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hal-02152388 , version 1 (11-06-2019)

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Guillaume Gomme, Gaël Gautier, Marc Portail, Eric Frayssinet, Daniel Alquier, et al.. A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate. physica status solidi (a), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩. ⟨hal-02152388⟩
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