This paper presents a novel way to switch dual-behavior resonator (DBR) filters without any additional active surface-mount components. By using a semiconductor substrate, we were able to simultaneously co-design the filters and semiconductor distributed doped areas (ScDDAs) with integrated N + PP + junctions as active elements. These ScDDAs act as electrical vias in the substrate, which makes it possible to have an open-circuited resonator in the OFF state and a short-circuited resonator in the ON state, and, consequently, to control the transmission zeroes of the filters. This method offers degrees of freedom as the dimensions and positions of these doped areas can be chosen to obtain the best performances. In this study, four filters were simulated and fabricated to spotlight different possibilities for the dimensions and positions of the ScDDA to control the lowor high-frequency transmission zero of the filters. The simulations were in very good agreement with the measured results. All the filters present insertion losses lower than 2 dB in the OFF and ON states, a great flexibility in the frequency choice, and good agility compared with the state of the art.