The influence of Al 2 O 3 nanolamination in ALD ZrO 2 capacitor on physical and electrical characteristics - Université de Tours Access content directly
Journal Articles Journal of Applied Physics Year : 2022

The influence of Al 2 O 3 nanolamination in ALD ZrO 2 capacitor on physical and electrical characteristics

Abstract

In this paper, the nanolamination of a ZrO 2 insulator by Al 2 O 3 for metal insulator metal capacitor applications has been studied. The insulating layers (ZrO 2 and Al 2 O 3 ) were deposited by atomic layer deposition and the electrodes were made of TiN. Different configurations of ZrO 2 and Al 2 O 3 alternations were studied, including 1 to 16 Al 2 O 3 inclusions in the ZrO 2 layer. X-ray diffraction of the insulator configurations showed that with four or more Al 2 O 3 inclusions, the structure loses its crystalline orientation and becomes amorphous. Electrical characterizations have been conducted to study the capacitance, breakdown field, and leakage current for every insulator configuration. The capacitance density significantly decreases as the number of Al 2 O 3 layers increases, except when an amorphous transition occurs; at this point, a local maximum of 17 nF/mm 2 was found. A 19% increase of the breakdown field of samples with two or more Al 2 O 3 inclusions has been correlated with an increase of leakage current explained by the emergence of the Fowler–Nordeim conduction mechanism at electrical fields higher than 4 MV/cm.
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Dates and versions

hal-03980029 , version 1 (09-02-2023)

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Virgil Guillon, Benoit Riou, Jérôme Billoué, Thomas Defforge, Pascal Gardes, et al.. The influence of Al 2 O 3 nanolamination in ALD ZrO 2 capacitor on physical and electrical characteristics. Journal of Applied Physics, 2022, 132 (23), pp.234103. ⟨10.1063/5.0128507⟩. ⟨hal-03980029⟩
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