In this paper, the nanolamination of a ZrO 2 insulator by Al 2 O 3 for metal insulator metal capacitor applications has been studied. The insulating layers (ZrO 2 and Al 2 O 3 ) were deposited by atomic layer deposition and the electrodes were made of TiN. Different configurations of ZrO 2 and Al 2 O 3 alternations were studied, including 1 to 16 Al 2 O 3 inclusions in the ZrO 2 layer. X-ray diffraction of the insulator configurations showed that with four or more Al 2 O 3 inclusions, the structure loses its crystalline orientation and becomes amorphous. Electrical characterizations have been conducted to study the capacitance, breakdown field, and leakage current for every insulator configuration. The capacitance density significantly decreases as the number of Al 2 O 3 layers increases, except when an amorphous transition occurs; at this point, a local maximum of 17 nF/mm 2 was found. A 19% increase of the breakdown field of samples with two or more Al 2 O 3 inclusions has been correlated with an increase of leakage current explained by the emergence of the Fowler–Nordeim conduction mechanism at electrical fields higher than 4 MV/cm.