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Proceedings Materials Science Forum Year : 2022

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Abstract

We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of selectively grown Si on a masked SiC(100) and the further regrowth of 3C-SiC on a Si (110) layer. The final release of the SiC membrane, to define a CMUT, is also addressed using a simple thermal treatment allowing to suppress several technological steps.
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Dates and versions

hal-03981941 , version 1 (10-02-2023)

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Marc Portail, Sébastien Chenot, Mahdis Ghorbanzadeh-Bariran, Rami Khazaka, Luan Nguyen, et al.. Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues. Materials Science Forum, 1062, pp.94-98, 2022, 978-3-0357-2760-9. ⟨10.4028/p-00832x⟩. ⟨hal-03981941⟩
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